The Center for Functional Nanomaterials (CFN) at Brookhaven is a DOE-funded national scientific user facility, offering users a supported research experience with top-caliber scientists and access to state-of-the-art instrumentation. The CFN mission is advancing nanoscience through frontier fundamental research and technique development and is the nexus of a broad collaboration network. Each year, CFN staff members support the research of nearly 600 external facility users.

Three strategic nanoscience themes underlie the CFN scientific facilities: The CFN conducts research on nanomaterial synthesis by assembly designing precise architectures with targeted functionality by organizing nanoscale components.  The CFN researches and applies platforms for state-of-the-art techniques for Accelerated Nanomaterial Discovery, integrating synthesis, advanced characterization, physical modeling, and computer science to iteratively explore a wide range of material parameters. The CFN develops and utilizes advanced capabilities for studies of Nanomaterials in Operando Conditions for characterizing materials and reactions at the atomic scale in real-world environments.

The CFN is seeking an exceptional Postdoctoral Research Associate to conduct novel research developing neuromorphic devices and materials, and their integration with application-specific integrated circuits (ASICs) for demonstrating efficient vector matrix multiplication (VMM) operations for AI applications. You will explore materials and device physics in the state-of-the-art neuromorphic materials and devices, such as memristors based on metal oxides and/or 2D materials, and develop nanofabrication processes for integrating memristor arrays on commercially fabricated ASIC chips. This project also provides the opportunity to investigate the application of novel device patterning methods (e.g., block copolymer thin-film self-assembly) and the ASIC-based electrical characterization of memristor arrays through collaboration with scientists at Instrumentation Division of BNL. You will work under the supervision of Dr. Chang-Yong Nam (Electronic Nanomaterials Group).

As the Job Title, you will have these roles and responsibilities:

• You will fabricate unit memristor devices based on the state-of-the-art neuromorphic materials and device structures.
• You will electrically characterize the fabricated unit memristor devices, especially their DC switching characteristics as well as pulse-based, neuromorphic operational characteristics.
• You will explore new materials, device physics, and patterning methods for improving the performance of neuromorphic devices.
• You will perform nanofabrication of memristor arrays and their integration on commercially fabricated ASIC chips designed for efficient VMM operation and AI application.
• You will collaborate with scientific staff with diverse backgrounds including materials science, nanofabrication, device fabrication and physics, and ASIC design and electrical characterization.
• You will disseminate research findings via paper publications and external presentations.

• Ph.D. in a relevant discipline (Materials Science, Physics, Electrical Engineering, or a related engineering discipline)
• Demonstrated experimental expertise in memristor device fabrication and electrical characterization, as well as associated materials and device physics.
• Demonstrated experimental experience in nanofabrication processes (e.g., electron-beam lithography, PVD, ALD etc.) and neuromorphic device data analysis.
• Communicate effectively, verbally and in writing, evidenced by peer-reviewed publications and conference presentations/proceedings.
• Committed to creative and independent research, teamwork, and fostering an environment of safe scientific work practices.
• Committed to fostering an environment of safe scientific work practices.

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• Hands-on experience in fabrication and electrical characterization (using semiconductor parameter analyzer) of neuromorphic devices based on metal oxides and/or 2D materials.
• Hands-on experience in fabricating memristor arrays and their array-level electrical characterization.
• Experience in engineering materials and device physics for improving neuromorphic device performance.
• Working knowledge of integrating memristor arrays with complementary metal oxide semiconductor (CMOS) circuits such as ASICs and their system-level functions and operations.
• Experience in materials characterization and analysis based on transmission electron microscopy (TEM) and surface science techniques (e.g., X-ray photoelectron spectroscopy (XPS), scanning probe microscopy techniques etc.)
• Ability to work effectively in an interdisciplinary team to tackle challenging scientific problems.

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BNL policy requires that after obtaining their PhD, eligible candidates for research associate appointments may not exceed a combined total of 5 years of relevant work experience as a post-doc and/or in an R&D position, excluding time associated with family planning, military service, illness or other life-changing events.

Brookhaven National Laboratory and the Energy and Photon Sciences Directorate are committed to your success. We offer a supportive work environment and the resources necessary for you to succeed.

Brookhaven Laboratory is committed to providing fair, equitable and competitive compensation. The full salary range for this position is $68,400-90,825-113,250. Salary offers will be commensurate with the final candidate’s qualification, education and experience and considered with the internal peer group.

Brookhaven employees are subject to restrictions related to participation in Foreign Government Talent Recruitment Programs, as defined and detailed in United States Department of Energy Order 486.1A. You will be asked to disclose any such participation at the time of hire for review by Brookhaven. The full text of the Order may be found at: https://www.directives.doe.gov/directives-documents/400-series/0486.1-BOrder-a/@@images/file